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Hu, H; Zhang, GM; Yu, L; Hu, H , Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China.
Mesoscopic kondo screening effect in a single-electron transistor embedded in a metallic ring
Source PublicationPHYSICAL REVIEW LETTERS
KeywordQuantum-dot Impurity
AbstractWe study the Kondo screening effect generated by a single-electron transistor or quantum dot embedded in a small metallic ring. When the ring circumference L becomes comparable to the fundamental length scale xi (0)(K) = h(upsilonF)/T-K(0) associated with the bulk Kondo temperature, the Kondo resonance is strongly affected, depending on the total number of electrons (mod4) and magnetic flux threading the ring. The resulting Kondo-assisted persistent currents are also calculated in both Kondo and mixed-valence regimes, and the maximum values are found in the crossover region.
2001
ISSN0031-9007
Volume86Issue:24Pages:5558-5561
Subject AreaPhysics
Indexed BySCI
Citation statistics
Cited Times:51[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.itp.ac.cn/handle/311006/12727
Collection理论物理所科研产出_SCI论文
Corresponding AuthorHu, H , Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China.
Recommended Citation
GB/T 7714
Hu, H,Zhang, GM,Yu, L,et al. Mesoscopic kondo screening effect in a single-electron transistor embedded in a metallic ring[J]. PHYSICAL REVIEW LETTERS,2001,86(24):5558-5561.
APA Hu, H,Zhang, GM,Yu, L,&Hu, H , Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China..(2001).Mesoscopic kondo screening effect in a single-electron transistor embedded in a metallic ring.PHYSICAL REVIEW LETTERS,86(24),5558-5561.
MLA Hu, H,et al."Mesoscopic kondo screening effect in a single-electron transistor embedded in a metallic ring".PHYSICAL REVIEW LETTERS 86.24(2001):5558-5561.
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