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题名: Mesoscopic kondo screening effect in a single-electron transistor embedded in a metallic ring
作者: Hu, H ;  Zhang, GM ;  Yu, L
刊名: PHYSICAL REVIEW LETTERS
出版日期: 2001
卷号: 86, 期号:24, 页码:5558-5561
关键词: QUANTUM-DOT ;  IMPURITY
学科分类: Physics
通讯作者: Hu, H , Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China.
部门归属: Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China; Tsing Hua Univ, Ctr Adv Study, Beijing 100084, Peoples R China; Abdus Salam Int Ctr Theoret Phys, I-34100 Trieste, Italy; Acad Sinica, Inst Theoret Phys, Beijing 100080, Peoples R China
英文摘要: We study the Kondo screening effect generated by a single-electron transistor or quantum dot embedded in a small metallic ring. When the ring circumference L becomes comparable to the fundamental length scale xi (0)(K) = h(upsilonF)/T-K(0) associated with the bulk Kondo temperature, the Kondo resonance is strongly affected, depending on the total number of electrons (mod4) and magnetic flux threading the ring. The resulting Kondo-assisted persistent currents are also calculated in both Kondo and mixed-valence regimes, and the maximum values are found in the crossover region.
收录类别: SCI
原文出处: 查看原文
WOS记录号: WOS:000169239500038
Citation statistics: 
内容类型: 期刊论文
URI标识: http://ir.itp.ac.cn/handle/311006/12727
Appears in Collections:理论物理所1978-2010年知识产出_期刊论文

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Recommended Citation:
Hu, H,Zhang, GM,Yu, L. Mesoscopic kondo screening effect in a single-electron transistor embedded in a metallic ring[J]. PHYSICAL REVIEW LETTERS,2001,86(24):5558-5561.
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