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题名: Optical interface phonon modes in graded quantum well structures: perturbation theory
作者: Qi, YC ;  Qi, XY
刊名: JOURNAL OF PHYSICS-CONDENSED MATTER
出版日期: 1999
卷号: 11, 期号:45, 页码:8855-8865
关键词: SYSTEMS ;  SUPERLATTICES ;  DEPENDENCE ;  CRYSTALS ;  FIELD
学科分类: Physics
通讯作者: Qi, YC , Taiyuan Univ Technol, Dept Phys, 1 E Bldg 7,79 W Yingze ST, Taiyuan 030024, Peoples R China.
部门归属: Taiyuan Univ Technol, Dept Phys, Taiyuan 030024, Peoples R China; Acad Sinica, Inst Theoret Phys, Beijing 100080, Peoples R China
英文摘要: The behaviour of the optical interface phonon in the graded quantum well (GQW) of AlxGa1-xAs with infinite Al0.4Ga0.6As barrier layers is investigated based on the dielectric continuum model. The solutions of the optical interface phonon modes are obtained. The perturbation theory is developed for kL << 1. It is found that the properties of the optical interface phonon in the GQW for kL << 1 are quite different from those in the square quantum well (SQW), as are those of GaAs-type modes from those of AlAs-type ones.
收录类别: SCI
原文出处: 查看原文
WOS记录号: WOS:000083910100010
Citation statistics: 
内容类型: 期刊论文
URI标识: http://ir.itp.ac.cn/handle/311006/13064
Appears in Collections:理论物理所1978-2010年知识产出_期刊论文

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Recommended Citation:
Qi, YC,Qi, XY. Optical interface phonon modes in graded quantum well structures: perturbation theory[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,1999,11(45):8855-8865.
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