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Electronic properties of a doped antiferromagnet on a kagome lattice
Yu, WQ; Feng, SP; Yu, WQ , Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China.
1999
发表期刊PHYSICAL REVIEW B
ISSN0163-1829
卷号59期号:21页码:13546-13549
摘要Within the t-J model, we study the electronic properties of a doped antiferromagnet on a kagome lattice based on the framework of the self-consistent mean-field theory. At the half-filling, the spin-liquid ground-state energy per site of the kagome antiferromagnet is E-g/N(s)J = - 0.859, which is in very good agreement with the numerical estimates. Away from the half-filling, the electron phatoemission spectroscopy and density of states are discussed, and the results indicate that there is a gap in the normal state of the system.
部门归属Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China; Acad Sinica, Inst Theoret Phys, Beijing 100080, Peoples R China
关键词Copper-oxide Materials Superconducting Transition-temperature 2-dimensional Heisenberg-model Resonating-valence-bond Triangular-lattice Photoemission Order Separation States Wave
学科领域Physics
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收录类别SCI
WOS记录号WOS:000080778700016
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被引频次:3[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.itp.ac.cn/handle/311006/13140
专题理论物理所1978-2010年知识产出
通讯作者Yu, WQ , Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China.
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GB/T 7714
Yu, WQ,Feng, SP,Yu, WQ , Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China.. Electronic properties of a doped antiferromagnet on a kagome lattice[J]. PHYSICAL REVIEW B,1999,59(21):13546-13549.
APA Yu, WQ,Feng, SP,&Yu, WQ , Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China..(1999).Electronic properties of a doped antiferromagnet on a kagome lattice.PHYSICAL REVIEW B,59(21),13546-13549.
MLA Yu, WQ,et al."Electronic properties of a doped antiferromagnet on a kagome lattice".PHYSICAL REVIEW B 59.21(1999):13546-13549.
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