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The effect of stoichiometric disturbance on activation of MeV Si implantation in GaAs
Zhang, YW; Ding, EJ; Zhang, TH; Zhang, YW , Lund Inst Technol, Dept Phys Nucl, Box 118, S-22100 Lund, Sweden.
1999
发表期刊NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN0168-583X
卷号152期号:40942页码:307-313
摘要MeV Si implantation into semi-insulating (SI) GaAs is a common technique used to create a deep doping layer. It is observed that the maximum of the carrier concentration is at a shallower depth than that of the implanted atom concentration. This unexpected phenomenon has previously been explained as depth measurement error. Based on our theoretical calculations and experiments, the phenomenon can be attributed to the effect of non-uniform stoichiometric disturbances (NSD) on the activation of implanted atoms. The effect of NSD in GaAs substrate is caused by MeV implantation. After implantation, an excess concentration of the heavier element As exists at shallower depth, while an excess concentration of the lighter element Ga is seen at greater depth. It is likely that Si atoms move more easily to Ga sites when they are heated in an As-rich environment. Excess lattice interstitials build up around the depth of the peak in the implanted Si+ concentration and prevent Si atoms from becoming activated there. (C) 1999 Elsevier Science B.V. All rights reserved.
部门归属Lund Inst Technol, Dept Phys Nucl, S-22100 Lund, Sweden; Beijing Normal Univ, Inst Low Energy Nucl Phys, Beijing 100875, Peoples R China; CCAST, World Lab, Beijing 100080, Peoples R China; Acad Sinica, Inst Theoret Phys, Beijing 100080, Peoples R China
关键词Raman-spectroscopy Ion-implantation Inp Damage
学科领域Physics
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收录类别SCI
WOS记录号WOS:000080041400012
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被引频次:7[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.itp.ac.cn/handle/311006/13154
专题理论物理所1978-2010年知识产出
通讯作者Zhang, YW , Lund Inst Technol, Dept Phys Nucl, Box 118, S-22100 Lund, Sweden.
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Zhang, YW,Ding, EJ,Zhang, TH,et al. The effect of stoichiometric disturbance on activation of MeV Si implantation in GaAs[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,1999,152(40942):307-313.
APA Zhang, YW,Ding, EJ,Zhang, TH,&Zhang, YW , Lund Inst Technol, Dept Phys Nucl, Box 118, S-22100 Lund, Sweden..(1999).The effect of stoichiometric disturbance on activation of MeV Si implantation in GaAs.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,152(40942),307-313.
MLA Zhang, YW,et al."The effect of stoichiometric disturbance on activation of MeV Si implantation in GaAs".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 152.40942(1999):307-313.
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