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题名: The effect of stoichiometric disturbance on activation of MeV Si implantation in GaAs
作者: Zhang, YW ;  Ding, EJ ;  Zhang, TH
刊名: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
出版日期: 1999
卷号: 152, 期号:40942, 页码:307-313
关键词: RAMAN-SPECTROSCOPY ;  ION-IMPLANTATION ;  INP ;  DAMAGE
学科分类: Physics
通讯作者: Zhang, YW , Lund Inst Technol, Dept Phys Nucl, Box 118, S-22100 Lund, Sweden.
部门归属: Lund Inst Technol, Dept Phys Nucl, S-22100 Lund, Sweden; Beijing Normal Univ, Inst Low Energy Nucl Phys, Beijing 100875, Peoples R China; CCAST, World Lab, Beijing 100080, Peoples R China; Acad Sinica, Inst Theoret Phys, Beijing 100080, Peoples R China
英文摘要: MeV Si implantation into semi-insulating (SI) GaAs is a common technique used to create a deep doping layer. It is observed that the maximum of the carrier concentration is at a shallower depth than that of the implanted atom concentration. This unexpected phenomenon has previously been explained as depth measurement error. Based on our theoretical calculations and experiments, the phenomenon can be attributed to the effect of non-uniform stoichiometric disturbances (NSD) on the activation of implanted atoms. The effect of NSD in GaAs substrate is caused by MeV implantation. After implantation, an excess concentration of the heavier element As exists at shallower depth, while an excess concentration of the lighter element Ga is seen at greater depth. It is likely that Si atoms move more easily to Ga sites when they are heated in an As-rich environment. Excess lattice interstitials build up around the depth of the peak in the implanted Si+ concentration and prevent Si atoms from becoming activated there. (C) 1999 Elsevier Science B.V. All rights reserved.
收录类别: SCI
原文出处: 查看原文
WOS记录号: WOS:000080041400012
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内容类型: 期刊论文
URI标识: http://ir.itp.ac.cn/handle/311006/13154
Appears in Collections:理论物理所1978-2010年知识产出_期刊论文

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Recommended Citation:
Zhang, YW,Ding, EJ,Zhang, TH. The effect of stoichiometric disturbance on activation of MeV Si implantation in GaAs[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,1999,152(40942):307-313.
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