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题名: Semiconductor-cavity QED in high-Q regimes: Detuning effect
作者: Liu, YX ;  Imoto, N ;  Ozdemir, SK ;  Jin, GR ;  Sun, CP
刊名: PHYSICAL REVIEW A
出版日期: 2002
卷号: 65, 期号:2, 页码:-
关键词: QUANTUM-WELL STRUCTURES ;  HIGH-DENSITY EXCITON ;  OPTICAL NONLINEARITY ;  SPONTANEOUS EMISSION ;  ROOM-TEMPERATURE ;  DOTS ;  MICROCAVITIES ;  COMPUTATION ;  LASER
学科分类: Physics
通讯作者: Liu, YX , Grad Univ Adv Studies SOKEN, Kanagawa 2400193, Japan.
部门归属: Grad Univ Adv Studies SOKEN, Kanagawa 2400193, Japan; CREST Res Team Interacting Carrier Elect, Kanagawa 2400193, Japan; NTT Basic Res Labs, Kanagawa 2430198, Japan; Chinese Acad Sci, Inst Theoret Phys, Beijing 100080, Peoples R China
英文摘要: The nonresonant interaction between the high-density excitons in a quantum well and a single-mode cavity field is investigated. An analytical expression for the physical spectrum of the excitons is obtained. The spectral properties of the excitons, which are initially prepared in the number states or the superposed states of the two different number states by the resonant femtosecond pulse pumping experiment, are studied. A numerical study of the physical spectrum is carried out and a discussion of the detuning effect is presented.
收录类别: SCI
原文出处: 查看原文
WOS记录号: WOS:000173879500102
Citation statistics: 
内容类型: 期刊论文
URI标识: http://ir.itp.ac.cn/handle/311006/13607
Appears in Collections:理论物理所1978-2010年知识产出_期刊论文

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Recommended Citation:
Liu, YX,Imoto, N,Ozdemir, SK,et al. Semiconductor-cavity QED in high-Q regimes: Detuning effect[J]. PHYSICAL REVIEW A,2002,65(2):-.
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