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题名: One-band Hubbard model with hopping asymmetry and the effective theory at finite U: Phase diagram and metal-insulator transition
作者: Wen, YC ;  Yu, Y
刊名: PHYSICAL REVIEW B
出版日期: 2005
卷号: 72, 期号:4, 页码:-
关键词: VALENCE-BOND STATE ;  PAIRING CORRELATIONS ;  ANTIFERROMAGNETISM ;  SUPERCONDUCTIVITY ;  LA2CUO4
学科分类: Physics
通讯作者: Wen, YC , Chinese Acad Sci, Inst Theoret Phys, POB 2735, Beijing 100080, Peoples R China.
部门归属: Chinese Acad Sci, Inst Theoret Phys, Beijing 100080, Peoples R China
英文摘要: We study the one-band Hubbard model at half filling with hopping asymmetry and its effective model at finite but large U up to the second order of t(mix)/U. Two variational wave functions, the resonating valence bond (RVB) wave function and antiferromagnetic (AF) RVB coexisted wave function, are studied by variational Monte Carlo method on LxL square lattices up to L=12. Based on these two wave functions, the phase diagrams for both models are presented. For the Hubbard model, we find that there is a metal-insulator transition when the hopping parameter t(mix) which changes the local double occupant vanishes while only a metal-insulator crossover is explored for any finite t(mix). For the effective model in which the perturbation expansion is up to the second order of t(mix)/U, a clear metal-insulator transition can be identified for both variational wave functions and the phase diagram can be drawn accordingly. In both models, we find that the systems are dominated by AF-RVB wave function when U is large while the RVB wave function is favored when U is small.
收录类别: SCI
原文出处: 查看原文
WOS记录号: WOS:000230890300046
Citation statistics: 
内容类型: 期刊论文
URI标识: http://ir.itp.ac.cn/handle/311006/13797
Appears in Collections:理论物理所1978-2010年知识产出_期刊论文

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Recommended Citation:
Wen, YC,Yu, Y. One-band Hubbard model with hopping asymmetry and the effective theory at finite U: Phase diagram and metal-insulator transition[J]. PHYSICAL REVIEW B,2005,72(4):-.
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