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题名: Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure
作者: Yao, W ;  Qiu, ZJ ;  Gui, YS ;  Zheng, ZW ;  Lu, J ;  Tang, N ;  Shen, B ;  Chu, JH
刊名: ACTA PHYSICA SINICA
出版日期: 2005
卷号: 54, 期号:5, 页码:2247-2251
关键词: ALXGA1-XN/GAN HETEROSTRUCTURES ;  INTERSUBBAND SCATTERING ;  ELECTRON-GAS ;  HETEROJUNCTIONS
学科分类: Physics
通讯作者: Chu, JH , Chinese Acad Sci, Shanghai Inst Theoret Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China.
部门归属: Chinese Acad Sci, Shanghai Inst Theoret Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China; Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China; Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
英文摘要: Magneto-transport measurements have been carried out on a Si modulation-doped Al0.22Ga0.78 N/GaN heterostructure in a temperature range between 1.5 and 25 K under magnetic field up to 10T. Striking beating patterns in magnetoresistance vs magnetic field are observed in the vicinity of a specific temperature. Theoretical simulation is performed and the comparison between numerical simulations and the experimental data reveals that the beating patterns are due to the interference of the magneto-intersubband scattering and the SdH oscillator of first subband.
收录类别: SCI
内容类型: 期刊论文
URI标识: http://ir.itp.ac.cn/handle/311006/13827
Appears in Collections:理论物理所1978-2010年知识产出_期刊论文

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Recommended Citation:
Yao, W,Qiu, ZJ,Gui, YS,et al. Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure[J]. ACTA PHYSICA SINICA,2005,54(5):2247-2251.
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