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Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure
Yao, W; Qiu, ZJ; Gui, YS; Zheng, ZW; Lu, J; Tang, N; Shen, B; Chu, JH; Chu, JH , Chinese Acad Sci, Shanghai Inst Theoret Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China.
2005
发表期刊ACTA PHYSICA SINICA
ISSN1000-3290
卷号54期号:5页码:2247-2251
摘要Magneto-transport measurements have been carried out on a Si modulation-doped Al0.22Ga0.78 N/GaN heterostructure in a temperature range between 1.5 and 25 K under magnetic field up to 10T. Striking beating patterns in magnetoresistance vs magnetic field are observed in the vicinity of a specific temperature. Theoretical simulation is performed and the comparison between numerical simulations and the experimental data reveals that the beating patterns are due to the interference of the magneto-intersubband scattering and the SdH oscillator of first subband.
部门归属Chinese Acad Sci, Shanghai Inst Theoret Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China; Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China; Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
关键词Alxga1-xn/gan Heterostructures Intersubband Scattering Electron-gas Heterojunctions
学科领域Physics
收录类别SCI
文献类型期刊论文
条目标识符http://ir.itp.ac.cn/handle/311006/13827
专题理论物理所SCI论文
通讯作者Chu, JH , Chinese Acad Sci, Shanghai Inst Theoret Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China.
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GB/T 7714
Yao, W,Qiu, ZJ,Gui, YS,et al. Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure[J]. ACTA PHYSICA SINICA,2005,54(5):2247-2251.
APA Yao, W.,Qiu, ZJ.,Gui, YS.,Zheng, ZW.,Lu, J.,...&Chu, JH , Chinese Acad Sci, Shanghai Inst Theoret Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China..(2005).Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure.ACTA PHYSICA SINICA,54(5),2247-2251.
MLA Yao, W,et al."Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure".ACTA PHYSICA SINICA 54.5(2005):2247-2251.
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