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Yang, F; Ding, Y; Qu, FM; Shen, J; Chen, J; Wei, ZC; Ji, ZQ; Liu, GT; Fan, J; Yang, CL; Xiang, T; Lu, L; Lu, L (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Daniel Chee Tsui Lab, Beijing 100190, Peoples R China.
Proximity effect at superconducting Sn-Bi2Se3 interface
发表期刊PHYSICAL REVIEW B
语种英语
关键词Topological Insulators Andreev-reflection Surface States Microjunctions Conductance Transition Transport Junctions Sr2ruo4
摘要We have investigated the conductance spectra of Sn-Bi2Se3 interface junctions down to 250mK and in different magnetic fields. A number of conductance anomalies were observed below the superconducting transition temperature of Sn, including a small gap that is different from that of Sn, and a zero-bias conductance peak that increases at lower temperatures. We discussed the possible origins of the smaller gap and the zero-bias conductance peak. These phenomena support the idea that a proximity-effect-induced chiral superconducting phase is formed at the interface between the superconducting Sn and the strong spin-orbit coupling material Bi2Se3.
2012
ISSN1098-0121
卷号85期号:10页码:104508
学科领域Physics
收录类别SCI
项目资助者MOST [2009CB929101, 2011CB921702]; NSFC [11174340, 11174357]; CAS ; MOST [2009CB929101, 2011CB921702]; NSFC [11174340, 11174357]; CAS ; MOST [2009CB929101, 2011CB921702]; NSFC [11174340, 11174357]; CAS ; MOST [2009CB929101, 2011CB921702]; NSFC [11174340, 11174357]; CAS
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被引频次:43[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.itp.ac.cn/handle/311006/15143
专题理论物理所科研产出_SCI论文
通讯作者Lu, L (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Daniel Chee Tsui Lab, Beijing 100190, Peoples R China.
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GB/T 7714
Yang, F,Ding, Y,Qu, FM,et al. Proximity effect at superconducting Sn-Bi2Se3 interface[J]. PHYSICAL REVIEW B,2012,85(10):104508.
APA Yang, F.,Ding, Y.,Qu, FM.,Shen, J.,Chen, J.,...&Lu, L .(2012).Proximity effect at superconducting Sn-Bi2Se3 interface.PHYSICAL REVIEW B,85(10),104508.
MLA Yang, F,et al."Proximity effect at superconducting Sn-Bi2Se3 interface".PHYSICAL REVIEW B 85.10(2012):104508.
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