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题名: Proximity effect at superconducting Sn-Bi2Se3 interface
作者: Yang, F ;  Ding, Y ;  Qu, FM ;  Shen, J ;  Chen, J ;  Wei, ZC ;  Ji, ZQ ;  Liu, GT ;  Fan, J ;  Yang, CL ;  Xiang, T ;  Lu, L
刊名: PHYSICAL REVIEW B
出版日期: 2012
卷号: 85, 期号:10, 页码:104508
关键词: TOPOLOGICAL INSULATORS ;  ANDREEV-REFLECTION ;  SURFACE ;  STATES ;  MICROJUNCTIONS ;  CONDUCTANCE ;  TRANSITION ;  TRANSPORT ;  JUNCTIONS ;  SR2RUO4
学科分类: Physics
通讯作者: Lu, L (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Daniel Chee Tsui Lab, Beijing 100190, Peoples R China.
部门归属: [Yang, Fan; Ding, Yue; Qu, Fanming; Shen, Jie; Chen, Jun; Wei, Zhongchao; Ji, Zhongqing; Liu, Guangtong; Fan, Jie; Yang, Changli; Xiang, Tao; Lu, Li] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Daniel Chee Tsui Lab, Beijing 100190, Peoples R China; [Xiang, Tao] Chinese Acad Sci, Inst Theoret Phys, Beijing 100190, Peoples R China
英文摘要: We have investigated the conductance spectra of Sn-Bi2Se3 interface junctions down to 250mK and in different magnetic fields. A number of conductance anomalies were observed below the superconducting transition temperature of Sn, including a small gap that is different from that of Sn, and a zero-bias conductance peak that increases at lower temperatures. We discussed the possible origins of the smaller gap and the zero-bias conductance peak. These phenomena support the idea that a proximity-effect-induced chiral superconducting phase is formed at the interface between the superconducting Sn and the strong spin-orbit coupling material Bi2Se3.
资助者: MOST [2009CB929101, 2011CB921702]; NSFC [11174340, 11174357]; CAS
收录类别: SCI
原文出处: 查看原文
语种: 英语
WOS记录号: WOS:000301476700003
Citation statistics: 
内容类型: 期刊论文
URI标识: http://ir.itp.ac.cn/handle/311006/15143
Appears in Collections:理论物理所2012年知识产出_期刊论文

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Recommended Citation:
Yang, F,Ding, Y,Qu, FM,et al. Proximity effect at superconducting Sn-Bi2Se3 interface[J]. PHYSICAL REVIEW B,2012,85(10):104508.
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