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题名: Radius-voltage relation of graphene bubbles controlled by gate voltage
作者: Mu, WH ;  Zhang, G ;  Ou-Yang, ZC
刊名: APPLIED PHYSICS LETTERS
出版日期: 2013
卷号: 103, 期号:5, 页码:53112
关键词: MECHANICAL-PROPERTIES ;  THERMAL-CONDUCTIVITY ;  LAYER GRAPHENE ;  SHEETS ;  RECTIFICATION ;  MEMBRANES ;  ADHESION
学科分类: Physics
通讯作者: Mu, WH (reprint author), Chinese Acad Sci, Inst Theoret Phys, State Key Lab Theoret Phys, POB 2735, Beijing 100190, Peoples R China.
部门归属: [Mu, Weihua; Ou-Yang, Zhong-can] Chinese Acad Sci, Inst Theoret Phys, State Key Lab Theoret Phys, Beijing 100190, Peoples R China; [Mu, Weihua] MIT, Dept Chem, Cambridge, MA 02139 USA; [Mu, Weihua; Ou-Yang, Zhong-can] Chinese Acad Sci, Kavli Inst Theoret Phys China, Beijing 100190, Peoples R China; [Zhang, Gang] Inst High Performance Comp, Singapore 138632, Singapore; [Ou-Yang, Zhong-can] Tsinghua Univ, Ctr Adv Study, Beijing 100084, Peoples R China
英文摘要: Graphene on the substrate can form bubbles rising above the sheet. In some cases, the bubbles is a perfect spherical surface crown, and its radius can be adjusted by external electric field. In this manuscript, we theoretically investigate the voltage dependence of the spherical bubble's radius. The calculated results are in good agreement with recent experiments on the graphene bubble controlled by applied gate voltage [Georgiou et al., Appl. Phys. Lett. 99, 093103 (2011)]. (C) 2013 AIP Publishing LLC.
资助者: National Science Foundation of China (NSFC) [11074259]; Major Research Plan of the National Natural Science Foundation of China [91027045]
收录类别: SCI
原文出处: 查看原文
语种: 英语
WOS记录号: WOS:000322723000083
Citation statistics: 
内容类型: 期刊论文
URI标识: http://ir.itp.ac.cn/handle/311006/15314
Appears in Collections:理论物理所2013年知识产出 _期刊论文

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Recommended Citation:
Mu, WH,Zhang, G,Ou-Yang, ZC. Radius-voltage relation of graphene bubbles controlled by gate voltage[J]. APPLIED PHYSICS LETTERS,2013,103(5):53112.
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