ITP OpenIR  > 理论物理所2015年知识产出
Topological insulator state in gated bilayer silicene
Zhang, MM; Xu, L; Zhang, J; Zhang, MM (reprint author), Xinjiang Univ, Sch Phys Sci & Technol, Urumqi 830046, Peoples R China.
2015
发表期刊JOURNAL OF PHYSICS-CONDENSED MATTER
卷号27期号:44页码:445301
文章类型Article
摘要We investigate the topological insulator state of gated bilayer silicene in the presence of extrinsic Rashba spin-orbit (SO) coupling. The system exhibits a band insulator (BI) phase for small Rashba SO coupling, and then translate to a strong topological insulator (TI) phase with both spin and valley filtered at large Rashba SO coupling. The strong TI phase is robust in the presence of intrinsic SO and intrinsic Rashba SO couplings. When a titled electric field is introduced, the in-plane component of the electric field gives rise to an interlayer Rashba SO coupling, and the system turns to a BI phase no matter how large the Rashab SO coupling and bias voltage are. This will provide potential application in nanoelectronics based on silicene.
关键词Bilayer Silicene Strong Topological Insulator Rashba Spin-orbit Coupling
学科领域Physics
资助者NSFC [11564038, 11404276, 11265015] ; NSFC [11564038, 11404276, 11265015] ; Doctoral fund of Xinjiang university [BS130112] ; Doctoral fund of Xinjiang university [BS130112] ; NSF of the Xinjiang [2014211A003] ; NSF of the Xinjiang [2014211A003] ; NSFC [11564038, 11404276, 11265015] ; NSFC [11564038, 11404276, 11265015] ; Doctoral fund of Xinjiang university [BS130112] ; Doctoral fund of Xinjiang university [BS130112] ; NSF of the Xinjiang [2014211A003] ; NSF of the Xinjiang [2014211A003]
DOIhttp://dx.doi.org/10.1088/0953-8984/27/44/445301
关键词[WOS]BERRY PHASE ; TEMPERATURE
收录类别SCI
语种英语
资助者NSFC [11564038, 11404276, 11265015] ; NSFC [11564038, 11404276, 11265015] ; Doctoral fund of Xinjiang university [BS130112] ; Doctoral fund of Xinjiang university [BS130112] ; NSF of the Xinjiang [2014211A003] ; NSF of the Xinjiang [2014211A003] ; NSFC [11564038, 11404276, 11265015] ; NSFC [11564038, 11404276, 11265015] ; Doctoral fund of Xinjiang university [BS130112] ; Doctoral fund of Xinjiang university [BS130112] ; NSF of the Xinjiang [2014211A003] ; NSF of the Xinjiang [2014211A003]
WOS类目Physics, Condensed Matter
引用统计
文献类型期刊论文
条目标识符http://ir.itp.ac.cn/handle/311006/20793
专题理论物理所2015年知识产出
通讯作者Zhang, MM (reprint author), Xinjiang Univ, Sch Phys Sci & Technol, Urumqi 830046, Peoples R China.
推荐引用方式
GB/T 7714
Zhang, MM,Xu, L,Zhang, J,et al. Topological insulator state in gated bilayer silicene[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2015,27(44):445301.
APA Zhang, MM,Xu, L,Zhang, J,&Zhang, MM .(2015).Topological insulator state in gated bilayer silicene.JOURNAL OF PHYSICS-CONDENSED MATTER,27(44),445301.
MLA Zhang, MM,et al."Topological insulator state in gated bilayer silicene".JOURNAL OF PHYSICS-CONDENSED MATTER 27.44(2015):445301.
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