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题名: Topological insulator state in gated bilayer silicene
作者: Zhang, MM;  Xu, L;  Zhang, J
刊名: JOURNAL OF PHYSICS-CONDENSED MATTER
出版日期: 2015
卷号: 27, 期号:44, 页码:445301
关键词: bilayer silicene ;  strong topological insulator ;  Rashba spin-orbit coupling
学科分类: Physics
DOI: http://dx.doi.org/10.1088/0953-8984/27/44/445301
通讯作者: Zhang, MM (reprint author), Xinjiang Univ, Sch Phys Sci & Technol, Urumqi 830046, Peoples R China.
文章类型: Article
英文摘要: We investigate the topological insulator state of gated bilayer silicene in the presence of extrinsic Rashba spin-orbit (SO) coupling. The system exhibits a band insulator (BI) phase for small Rashba SO coupling, and then translate to a strong topological insulator (TI) phase with both spin and valley filtered at large Rashba SO coupling. The strong TI phase is robust in the presence of intrinsic SO and intrinsic Rashba SO couplings. When a titled electric field is introduced, the in-plane component of the electric field gives rise to an interlayer Rashba SO coupling, and the system turns to a BI phase no matter how large the Rashab SO coupling and bias voltage are. This will provide potential application in nanoelectronics based on silicene.
类目[WOS]: Physics, Condensed Matter
关键词[WOS]: BERRY PHASE ;  TEMPERATURE
收录类别: SCI
项目资助者: NSFC [11564038, 11404276, 11265015] ;  Doctoral fund of Xinjiang university [BS130112] ;  NSF of the Xinjiang [2014211A003]
语种: 英语
Citation statistics: 
内容类型: 期刊论文
URI标识: http://ir.itp.ac.cn/handle/311006/20793
Appears in Collections:理论物理所2015年知识产出_期刊论文

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Recommended Citation:
Zhang, MM,Xu, L,Zhang, J. Topological insulator state in gated bilayer silicene[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2015,27(44):445301.
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