ITP OpenIR  > SCI期刊论文
Zhang, MM; Xu, L; Zhang, J; Zhang, MM (reprint author), Xinjiang Univ, Sch Phys Sci & Technol, Urumqi 830046, Peoples R China.
Topological insulator state in gated bilayer silicene
Source PublicationJOURNAL OF PHYSICS-CONDENSED MATTER
Language英语
KeywordBilayer Silicene Strong Topological Insulator Rashba Spin-orbit Coupling
AbstractWe investigate the topological insulator state of gated bilayer silicene in the presence of extrinsic Rashba spin-orbit (SO) coupling. The system exhibits a band insulator (BI) phase for small Rashba SO coupling, and then translate to a strong topological insulator (TI) phase with both spin and valley filtered at large Rashba SO coupling. The strong TI phase is robust in the presence of intrinsic SO and intrinsic Rashba SO couplings. When a titled electric field is introduced, the in-plane component of the electric field gives rise to an interlayer Rashba SO coupling, and the system turns to a BI phase no matter how large the Rashab SO coupling and bias voltage are. This will provide potential application in nanoelectronics based on silicene.
2015
Volume27Issue:44Pages:445301
Subject AreaPhysics
DOIhttp://dx.doi.org/10.1088/0953-8984/27/44/445301
Indexed BySCI
Funding OrganizationNSFC [11564038, 11404276, 11265015] ; NSFC [11564038, 11404276, 11265015] ; NSFC [11564038, 11404276, 11265015] ; NSFC [11564038, 11404276, 11265015] ; Doctoral fund of Xinjiang university [BS130112] ; Doctoral fund of Xinjiang university [BS130112] ; Doctoral fund of Xinjiang university [BS130112] ; Doctoral fund of Xinjiang university [BS130112] ; NSF of the Xinjiang [2014211A003] ; NSF of the Xinjiang [2014211A003] ; NSF of the Xinjiang [2014211A003] ; NSF of the Xinjiang [2014211A003]
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Document Type期刊论文
Identifierhttp://ir.itp.ac.cn/handle/311006/20793
CollectionSCI期刊论文
Corresponding AuthorZhang, MM (reprint author), Xinjiang Univ, Sch Phys Sci & Technol, Urumqi 830046, Peoples R China.
Recommended Citation
GB/T 7714
Zhang, MM,Xu, L,Zhang, J,et al. Topological insulator state in gated bilayer silicene[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2015,27(44):445301.
APA Zhang, MM,Xu, L,Zhang, J,&Zhang, MM .(2015).Topological insulator state in gated bilayer silicene.JOURNAL OF PHYSICS-CONDENSED MATTER,27(44),445301.
MLA Zhang, MM,et al."Topological insulator state in gated bilayer silicene".JOURNAL OF PHYSICS-CONDENSED MATTER 27.44(2015):445301.
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