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题名: Quantized transport of interface and edge states in bent graphene
作者: Li, CC;  Xu, L;  Zhang, J
刊名: SOLID STATE COMMUNICATIONS
出版日期: 2015
卷号: 207, 期号:0, 页码:30-34
关键词: Bent graphene ;  Interface state ;  Quantum Hall effect
学科分类: Physics
DOI: http://dx.doi.org/10.1016/j.ssc.2015.02.003
通讯作者: Zhang, J (reprint author), Xinjiang Univ, Sch Phys Sci & Technol, Urumqi 830046, Peoples R China.
文章类型: Article
英文摘要: We explore the transport behavior of interface and edge states in bent graphene under a magnetic field. The bending angle can change the distribution of interface and edge states, resulting in an interesting evolution of quantized conductance. The interface state vanishes when the bending angle is not less than pi/2, whereas the edge state remains. In the presence of Zeeman splitting, the transport properties are also considered and a quantum spin Hall effect is found. These results may provide a way to control the interlace Current. (C) 2015 Published by Elsevier Ltd.
类目[WOS]: Physics, Condensed Matter
关键词[WOS]: HGTE QUANTUM-WELLS ;  ELECTRONIC TRANSPORT ;  CARBON NANOTUBES ;  SPIN
收录类别: SCI
项目资助者: NSFC Project [11347207, 11404276, 11265015] ;  Doctoral Fund of Xinjiang university Project [BS130112] ;  NSF of the Xinjiang Uygur Autonomous Region [2014211A003]
语种: 英语
Citation statistics: 
内容类型: 期刊论文
URI标识: http://ir.itp.ac.cn/handle/311006/21043
Appears in Collections:理论物理所2015年知识产出_期刊论文

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Recommended Citation:
Li, CC,Xu, L,Zhang, J. Quantized transport of interface and edge states in bent graphene[J]. SOLID STATE COMMUNICATIONS,2015,207(0):30-34.
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