中国科学院理论物理研究所机构知识库
Advanced  
ITP OpenIR  > 理论物理所2016年知识产出  > 期刊论文
题名: Charge dynamics of the antiferromagnetically ordered Mott insulator
作者: Han, XJ ;  Liu, Y ;  Liu, ZY ;  Li, X ;  Chen, J ;  Liao, HJ ;  Xie, ZY ;  Normand, B ;  Xiang, T
刊名: NEW JOURNAL OF PHYSICS
出版日期: 2016
卷号: 18, 页码:103004
关键词: Hubbard model ;  Mott insulator ;  holon-doublon binding ;  spin fluctuations
学科分类: Physics
DOI: http://dx.doi.org/10.1088/1367-2630/18/10/103004
通讯作者: Xiang, T (reprint author), Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China. ;  Xiang, T (reprint author), Collaborat Innovat Ctr Quantum Matter, Beijing 100190, Peoples R China.
文章类型: Article
英文摘要: We introduce a slave-fermion formulation in which to study the charge dynamics of the half-filled Hubbard model on the square lattice. In this description, the charge degrees of freedom are represented by fermionic holons and doublons and the Mott-insulating characteristics of the ground state are the consequence of holon-doublon bound-state formation. The bosonic spin degrees of freedom are described by the antiferromagnetic Heisenberg model, yielding long-ranged (Neel) magnetic order at zero temperature. Within this framework and in the self-consistent Born approximation, we perform systematic calculations of the average double occupancy, the electronic density of states, the spectral function and the optical conductivity. Qualitatively, our method reproduces the lower and upper Hubbard bands, the spectral-weight transfer into a coherent quasiparticle band at their lower edges and the renormalisation of the Mott gap, which is associated with holon-doublon binding, due to the interactions of both quasiparticle species with the magnons. The zeros of the Green function at the chemical potential give the Luttinger volume, the poles of the self-energy reflect the underlying quasiparticle dispersion with a spin-renormalised hopping parameter and the optical gap is directly related to the Mott gap. Quantitatively, the square-lattice Hubbard model is one of the best-characterised problems in correlated condensed matter and many numerical calculations, all with different strengths and weaknesses, exist with which to benchmark our approach. From the semi-quantitative accuracy of our results for all but the weakest interaction strengths, we conclude that a self-consistent treatment of the spin-fluctuation effects on the charge degrees of freedom captures all the essential physics of the antiferromagnetic Mott-Hubbard insulator. We remark in addition that an analytical approximation with these properties serves a vital function in developing a full understanding of the fundamental physics of the Mott state, both in the antiferromagnetic insulator and at finite temperatures and dopings.
类目[WOS]: Physics, Multidisciplinary
关键词[WOS]: 2-DIMENSIONAL HUBBARD-MODEL ;  NARROW ENERGY-BANDS ;  MEAN-FIELD-THEORY ;  SPECTRAL WEIGHT FUNCTION ;  T-J MODEL ;  ELECTRON CORRELATIONS ;  QUANTUM ANTIFERROMAGNET ;  ANDERSON MODEL ;  SPIN POLARONS ;  FERMI-SURFACE
收录类别: SCI
项目资助者: National Natural Science Foundation of China [10934008, 10874215, 11174365] ;  National Basic Research Program of China [2012CB921704, 2011CB309703] ;  China Postdoctoral Science Foundation ;  National High Technology Research and Development Program of China [2015AA01A304] ;  Foundation of LCP
语种: 英语
Citation statistics: 
内容类型: 期刊论文
URI标识: http://ir.itp.ac.cn/handle/311006/21510
Appears in Collections:理论物理所2016年知识产出_期刊论文

Files in This Item: Download All
File Name/ File Size Content Type Version Access License
Charge dynamics of the antiferromagnetically ordered Mott insulator - Han et al. - 2016.pdf(2024KB)----开放获取View Download

Recommended Citation:
Han, XJ,Liu, Y,Liu, ZY,et al. Charge dynamics of the antiferromagnetically ordered Mott insulator[J]. NEW JOURNAL OF PHYSICS,2016,18:103004.
Service
 Recommend this item
 Sava as my favorate item
 Show this item's statistics
 Export Endnote File
Google Scholar
 Similar articles in Google Scholar
 [Han, XJ]'s Articles
 [Liu, Y]'s Articles
 [Liu, ZY]'s Articles
CSDL cross search
 Similar articles in CSDL Cross Search
 [Han, XJ]‘s Articles
 [Liu, Y]‘s Articles
 [Liu, ZY]‘s Articles
Related Copyright Policies
Null
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
文件名: Charge dynamics of the antiferromagnetically ordered Mott insulator - Han et al. - 2016.pdf
格式: Adobe PDF
此文件暂不支持浏览
所有评论 (0)
暂无评论
 
评注功能仅针对注册用户开放,请您登录
您对该条目有什么异议,请填写以下表单,管理员会尽快联系您。
内 容:
Email:  *
单位:
验证码:   刷新
您在IR的使用过程中有什么好的想法或者建议可以反馈给我们。
标 题:
 *
内 容:
Email:  *
验证码:   刷新

Items in IR are protected by copyright, with all rights reserved, unless otherwise indicated.

 

 

Valid XHTML 1.0!
Copyright © 2007-2017  中国科学院理论物理研究所 - Feedback
Powered by CSpace