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Liang, ZL; Zhang, L1,2; Zhang, P; Zheng, FW
The wavefunction reconstruction effects in calculation of DM-induced electronic transition in semiconductor targets
发表期刊JOURNAL OF HIGH ENERGY PHYSICS
语种英语
关键词DARK-MATTER PSEUDOPOTENTIALS
摘要The physics of the electronic excitation in semiconductors induced by sub-GeV dark matter (DM) have been extensively discussed in literature, under the framework of the standard plane wave (PW) and pseudopotential calculation scheme. In this paper, we investigate the implication of the all-electron (AE) reconstruction on estimation of the DM-induced electronic transition event rates. As a benchmark study, we first calculate the wavefunctions in silicon and germanium bulk crystals based on both the AE and pseudo (PS) schemes within the projector augmented wave (PAW) framework, and then make comparisons between the calculated excitation event rates obtained from these two approaches. It turns out that in process where large momentum transfer is kinetically allowed, the two calculated event rates can differ by a factor of a few. Such discrepancies are found to stem from the high-momentum components neglected in the PS scheme. It is thus implied that the correction from the AE wavefunction in the core region is necessary for an accurate estimate of the DM-induced transition event rate in semiconductors.
2019
ISSN1029-8479
期号1页码:149
学科领域Physics
学科门类Physics, Particles & Fields
DOI10.1007/JHEP01(2019)149
收录类别SCIE
引用统计
被引频次:1[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.itp.ac.cn/handle/311006/23506
专题SCI期刊论文
作者单位1.Inst Appl Phys & Computat Math, Huayuan Rd 6, Beijing 100088, Peoples R China
2.Univ Chinese Acad Sci, Sch Phys Sci, Yuquan Rd 19 A, Beijing 100049, Peoples R China
3.Chinese Acad Sci, CAS Key Lab Theoret Phys, Inst Theoret Phys, Zhong Guan Cun East St 55, Beijing 100190, Peoples R China
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GB/T 7714
Liang, ZL,Zhang, L,Zhang, P,et al. The wavefunction reconstruction effects in calculation of DM-induced electronic transition in semiconductor targets[J]. JOURNAL OF HIGH ENERGY PHYSICS,2019(1):149.
APA Liang, ZL,Zhang, L,Zhang, P,&Zheng, FW.(2019).The wavefunction reconstruction effects in calculation of DM-induced electronic transition in semiconductor targets.JOURNAL OF HIGH ENERGY PHYSICS(1),149.
MLA Liang, ZL,et al."The wavefunction reconstruction effects in calculation of DM-induced electronic transition in semiconductor targets".JOURNAL OF HIGH ENERGY PHYSICS .1(2019):149.
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