Knowledge Management System of Institute of Theoretical Physics, CAS
| Liang, ZL; Zhang, L1,2; Zhang, P; Zheng, FW | |
| The wavefunction reconstruction effects in calculation of DM-induced electronic transition in semiconductor targets | |
| Source Publication | JOURNAL OF HIGH ENERGY PHYSICS
 |
| Language | 英语 |
| Keyword | DARK-MATTER PSEUDOPOTENTIALS |
| Abstract | The physics of the electronic excitation in semiconductors induced by sub-GeV dark matter (DM) have been extensively discussed in literature, under the framework of the standard plane wave (PW) and pseudopotential calculation scheme. In this paper, we investigate the implication of the all-electron (AE) reconstruction on estimation of the DM-induced electronic transition event rates. As a benchmark study, we first calculate the wavefunctions in silicon and germanium bulk crystals based on both the AE and pseudo (PS) schemes within the projector augmented wave (PAW) framework, and then make comparisons between the calculated excitation event rates obtained from these two approaches. It turns out that in process where large momentum transfer is kinetically allowed, the two calculated event rates can differ by a factor of a few. Such discrepancies are found to stem from the high-momentum components neglected in the PS scheme. It is thus implied that the correction from the AE wavefunction in the core region is necessary for an accurate estimate of the DM-induced transition event rate in semiconductors. |
| 2019 | |
| ISSN | 1029-8479 |
| Issue | 1Pages:149 |
| Subject Area | Physics |
| MOST Discipline Catalogue | Physics, Particles & Fields |
| DOI | 10.1007/JHEP01(2019)149 |
| Indexed By | SCIE |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.itp.ac.cn/handle/311006/23506 |
| Collection | SCI期刊论文 |
| Affiliation | 1.Inst Appl Phys & Computat Math, Huayuan Rd 6, Beijing 100088, Peoples R China 2.Univ Chinese Acad Sci, Sch Phys Sci, Yuquan Rd 19 A, Beijing 100049, Peoples R China 3.Chinese Acad Sci, CAS Key Lab Theoret Phys, Inst Theoret Phys, Zhong Guan Cun East St 55, Beijing 100190, Peoples R China |
| Recommended Citation GB/T 7714 | Liang, ZL,Zhang, L,Zhang, P,et al. The wavefunction reconstruction effects in calculation of DM-induced electronic transition in semiconductor targets[J]. JOURNAL OF HIGH ENERGY PHYSICS,2019(1):149. |
| APA | Liang, ZL,Zhang, L,Zhang, P,&Zheng, FW.(2019).The wavefunction reconstruction effects in calculation of DM-induced electronic transition in semiconductor targets.JOURNAL OF HIGH ENERGY PHYSICS(1),149. |
| MLA | Liang, ZL,et al."The wavefunction reconstruction effects in calculation of DM-induced electronic transition in semiconductor targets".JOURNAL OF HIGH ENERGY PHYSICS .1(2019):149. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| The wavefunction rec（1688KB） | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | Application Full Text | |
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