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题名: Development of silicon purification by strong radiation catalysis method
作者: Chen Ying-Tian ;  Ho Tso-Hsiu ;  Lim Chern-Sing ;  Lim Boon Han
刊名: CHINESE PHYSICS B
出版日期: 2010
卷号: 19, 期号:11, 页码:-
关键词: NONIMAGING FOCUSING HELIOSTAT ;  PROTOTYPE
学科分类: Physics
通讯作者: Chen, YT , So Univ Sci & Technol, Shenzhen 518055, Peoples R China
部门归属: [Chen, YT] So Univ Sci & Technol, Shenzhen 518055, Peoples R China; [Chen, YT; Ho, TH] Chinese Acad Sci, Inst Theoret Phys, Beijing 100190, Peoples R China; [Chen, YT; Lim, CS; Lim, BH] Yangzhou Univ, Yangzhou 225009, Peoples R China
英文摘要: Using a new type of solar furnace and a specially designed induction furnace cost effective and highly efficient purification of metallurgical silicon into solar grade silicon can be achieved It is realized by a new method for extracting boron from silicon with the aid of photo chemical effect In this article, we discussed the postulated principle of strong radiation catalysis and the recent development in practice Starting from ordinary metallurgical silicon, we achieved a purification result of 0 12 ppmw to 0 3 ppmw of boron impurity in silicon by only single pass of a low cost and simple process, the major obstacle to make 'cheap' solar grade silicon feedstock in industry is thus removed
收录类别: SCI
原文出处: 查看原文
WOS记录号: WOS:000284973100005
Citation statistics: 
内容类型: 期刊论文
URI标识: http://ir.itp.ac.cn/handle/311006/5021
Appears in Collections:理论物理所1978-2010年知识产出_期刊论文

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Recommended Citation:
Chen Ying-Tian,Ho Tso-Hsiu,Lim Chern-Sing,et al. Development of silicon purification by strong radiation catalysis method[J]. CHINESE PHYSICS B,2010,19(11):-.
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