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题名: Electromagnetic manipulation for the anti-Zeno effect in an engineered quantum tunneling process
作者: Zhou, Lan ;  Hu, F. M. ;  Lu, Jing ;  Sun, C. P.
刊名: PHYSICAL REVIEW A
出版日期: 2006
卷号: 74, 期号:3, 页码:-
关键词: DECOHERENCE ;  DECAY ;  PARADOX ;  STATES ;  CHAIN
学科分类: Physics
通讯作者: Zhou, L , Chinese Acad Sci, Inst Theoret Phys, Beijing 100080, Peoples R China
部门归属: Chinese Acad Sci, Inst Theoret Phys, Beijing 100080, Peoples R China; Hunan Normal Univ, Dept Phys, Changsha 410081, Peoples R China; Capital Normal Univ, Dept Math, Beijing 100037, Peoples R China
英文摘要: We investigate the anti-Zeno phenomenon as well as the quantum Zeno effect for the irreversible quantum tunneling from a quantum dot to a ring array of quantum dots. By modeling the total system with the Anderson-Fano-Lee model, it is found that the transition from the quantum Zeno to the quantum anti-Zeno effect can happen by adjusting magnetic flux and gate voltage.
收录类别: SCI
原文出处: 查看原文
WOS记录号: WOS:000241067100020
Citation statistics: 
内容类型: 期刊论文
URI标识: http://ir.itp.ac.cn/handle/311006/5913
Appears in Collections:理论物理所1978-2010年知识产出_期刊论文

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Recommended Citation:
Zhou, Lan,Hu, F. M.,Lu, Jing,et al. Electromagnetic manipulation for the anti-Zeno effect in an engineered quantum tunneling process[J]. PHYSICAL REVIEW A,2006,74(3):-.
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