ITP OpenIR  > 理论物理所科研产出  > SCI论文
Zhou, Lan; Hu, F. M.; Lu, Jing; Sun, C. P.; Zhou, L , Chinese Acad Sci, Inst Theoret Phys, Beijing 100080, Peoples R China
Electromagnetic manipulation for the anti-Zeno effect in an engineered quantum tunneling process
Source PublicationPHYSICAL REVIEW A
KeywordDecoherence Decay Paradox States Chain
AbstractWe investigate the anti-Zeno phenomenon as well as the quantum Zeno effect for the irreversible quantum tunneling from a quantum dot to a ring array of quantum dots. By modeling the total system with the Anderson-Fano-Lee model, it is found that the transition from the quantum Zeno to the quantum anti-Zeno effect can happen by adjusting magnetic flux and gate voltage.
2006
ISSN1050-2947
Volume74Issue:3Pages:-
Subject AreaPhysics
Indexed BySCI
Citation statistics
Cited Times:10[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.itp.ac.cn/handle/311006/5913
Collection理论物理所科研产出_SCI论文
Corresponding AuthorZhou, L , Chinese Acad Sci, Inst Theoret Phys, Beijing 100080, Peoples R China
Recommended Citation
GB/T 7714
Zhou, Lan,Hu, F. M.,Lu, Jing,et al. Electromagnetic manipulation for the anti-Zeno effect in an engineered quantum tunneling process[J]. PHYSICAL REVIEW A,2006,74(3):-.
APA Zhou, Lan,Hu, F. M.,Lu, Jing,Sun, C. P.,&Zhou, L , Chinese Acad Sci, Inst Theoret Phys, Beijing 100080, Peoples R China.(2006).Electromagnetic manipulation for the anti-Zeno effect in an engineered quantum tunneling process.PHYSICAL REVIEW A,74(3),-.
MLA Zhou, Lan,et al."Electromagnetic manipulation for the anti-Zeno effect in an engineered quantum tunneling process".PHYSICAL REVIEW A 74.3(2006):-.
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