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Electromagnetic manipulation for the anti-Zeno effect in an engineered quantum tunneling process
Zhou, Lan; Hu, F. M.; Lu, Jing; Sun, C. P.; Zhou, L , Chinese Acad Sci, Inst Theoret Phys, Beijing 100080, Peoples R China
2006
发表期刊PHYSICAL REVIEW A
ISSN1050-2947
卷号74期号:3页码:-
摘要We investigate the anti-Zeno phenomenon as well as the quantum Zeno effect for the irreversible quantum tunneling from a quantum dot to a ring array of quantum dots. By modeling the total system with the Anderson-Fano-Lee model, it is found that the transition from the quantum Zeno to the quantum anti-Zeno effect can happen by adjusting magnetic flux and gate voltage.
部门归属Chinese Acad Sci, Inst Theoret Phys, Beijing 100080, Peoples R China; Hunan Normal Univ, Dept Phys, Changsha 410081, Peoples R China; Capital Normal Univ, Dept Math, Beijing 100037, Peoples R China
关键词Decoherence Decay Paradox States Chain
学科领域Physics
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收录类别SCI
WOS记录号WOS:000241067100020
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被引频次:8[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.itp.ac.cn/handle/311006/5913
专题理论物理所1978-2010年知识产出
通讯作者Zhou, L , Chinese Acad Sci, Inst Theoret Phys, Beijing 100080, Peoples R China
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GB/T 7714
Zhou, Lan,Hu, F. M.,Lu, Jing,et al. Electromagnetic manipulation for the anti-Zeno effect in an engineered quantum tunneling process[J]. PHYSICAL REVIEW A,2006,74(3):-.
APA Zhou, Lan,Hu, F. M.,Lu, Jing,Sun, C. P.,&Zhou, L , Chinese Acad Sci, Inst Theoret Phys, Beijing 100080, Peoples R China.(2006).Electromagnetic manipulation for the anti-Zeno effect in an engineered quantum tunneling process.PHYSICAL REVIEW A,74(3),-.
MLA Zhou, Lan,et al."Electromagnetic manipulation for the anti-Zeno effect in an engineered quantum tunneling process".PHYSICAL REVIEW A 74.3(2006):-.
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