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题名: First-principles theory of tunneling currents in metal-oxide-semiconductor structures
作者: Zhang, X. -G. ;  Lu, Zhong-Yi ;  Pantelides, Sokrates T.
刊名: APPLIED PHYSICS LETTERS
出版日期: 2006
卷号: 89, 期号:3, 页码:-
关键词: ULTRATHIN GATE OXIDES ;  BAND-STRUCTURE ;  ELECTRON-GAS ;  STATES ;  JUNCTIONS ;  FORMULA
学科分类: Physics
通讯作者: Zhang, XG , Oak Ridge Natl Lab, Ctr Nanophys Mat Sci, Oak Ridge, TN 37831 USA
部门归属: Oak Ridge Natl Lab, Ctr Nanophys Mat Sci, Oak Ridge, TN 37831 USA; Oak Ridge Natl Lab, Ctr Sci, Oak Ridge, TN 37831 USA; Oak Ridge Natl Lab, Div Math, Oak Ridge, TN 37831 USA; Chinese Acad Sci, Inst Theoret Phys, Beijing 100080, Peoples R China; Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA
英文摘要: Ultrathin gate-oxide films and alternate dielectrics call for accurate modeling of tunneling currents. Available models, based on the effective-mass approximation, yield good fits to finite-bias data, but fail for infinitesimal biases. Here we report a first-principles theory of tunneling currents. We show that the conductance at infinitesimal bias is a ground-state property and can be calculated accurately using density-functional theory and the local-density approximation for exchange and correlation. At finite biases, a discontinuity in the exchange-correlation potential must be properly included. Challenges for both theory and experiments are identified. (c) 2006 American Institute of Physics.
收录类别: SCI
原文出处: 查看原文
WOS记录号: WOS:000239174100063
Citation statistics: 
内容类型: 期刊论文
URI标识: http://ir.itp.ac.cn/handle/311006/5946
Appears in Collections:理论物理所1978-2010年知识产出_期刊论文

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Recommended Citation:
Zhang, X. -G.,Lu, Zhong-Yi,Pantelides, Sokrates T.. First-principles theory of tunneling currents in metal-oxide-semiconductor structures[J]. APPLIED PHYSICS LETTERS,2006,89(3):-.
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