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Zhang, X. -G.; Lu, Zhong-Yi; Pantelides, Sokrates T.; Zhang, XG , Oak Ridge Natl Lab, Ctr Nanophys Mat Sci, Oak Ridge, TN 37831 USA
First-principles theory of tunneling currents in metal-oxide-semiconductor structures
Source PublicationAPPLIED PHYSICS LETTERS
KeywordUltrathin Gate Oxides Band-structure Electron-gas States Junctions Formula
AbstractUltrathin gate-oxide films and alternate dielectrics call for accurate modeling of tunneling currents. Available models, based on the effective-mass approximation, yield good fits to finite-bias data, but fail for infinitesimal biases. Here we report a first-principles theory of tunneling currents. We show that the conductance at infinitesimal bias is a ground-state property and can be calculated accurately using density-functional theory and the local-density approximation for exchange and correlation. At finite biases, a discontinuity in the exchange-correlation potential must be properly included. Challenges for both theory and experiments are identified. (c) 2006 American Institute of Physics.
2006
ISSN0003-6951
Volume89Issue:3Pages:-
Subject AreaPhysics
Indexed BySCI
Citation statistics
Cited Times:8[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.itp.ac.cn/handle/311006/5946
Collection理论物理所科研产出_SCI论文
Corresponding AuthorZhang, XG , Oak Ridge Natl Lab, Ctr Nanophys Mat Sci, Oak Ridge, TN 37831 USA
Recommended Citation
GB/T 7714
Zhang, X. -G.,Lu, Zhong-Yi,Pantelides, Sokrates T.,et al. First-principles theory of tunneling currents in metal-oxide-semiconductor structures[J]. APPLIED PHYSICS LETTERS,2006,89(3):-.
APA Zhang, X. -G.,Lu, Zhong-Yi,Pantelides, Sokrates T.,&Zhang, XG , Oak Ridge Natl Lab, Ctr Nanophys Mat Sci, Oak Ridge, TN 37831 USA.(2006).First-principles theory of tunneling currents in metal-oxide-semiconductor structures.APPLIED PHYSICS LETTERS,89(3),-.
MLA Zhang, X. -G.,et al."First-principles theory of tunneling currents in metal-oxide-semiconductor structures".APPLIED PHYSICS LETTERS 89.3(2006):-.
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