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First-principles theory of tunneling currents in metal-oxide-semiconductor structures
Zhang, X. -G.; Lu, Zhong-Yi; Pantelides, Sokrates T.; Zhang, XG , Oak Ridge Natl Lab, Ctr Nanophys Mat Sci, Oak Ridge, TN 37831 USA
2006
发表期刊APPLIED PHYSICS LETTERS
ISSN0003-6951
卷号89期号:3页码:-
摘要Ultrathin gate-oxide films and alternate dielectrics call for accurate modeling of tunneling currents. Available models, based on the effective-mass approximation, yield good fits to finite-bias data, but fail for infinitesimal biases. Here we report a first-principles theory of tunneling currents. We show that the conductance at infinitesimal bias is a ground-state property and can be calculated accurately using density-functional theory and the local-density approximation for exchange and correlation. At finite biases, a discontinuity in the exchange-correlation potential must be properly included. Challenges for both theory and experiments are identified. (c) 2006 American Institute of Physics.
部门归属Oak Ridge Natl Lab, Ctr Nanophys Mat Sci, Oak Ridge, TN 37831 USA; Oak Ridge Natl Lab, Ctr Sci, Oak Ridge, TN 37831 USA; Oak Ridge Natl Lab, Div Math, Oak Ridge, TN 37831 USA; Chinese Acad Sci, Inst Theoret Phys, Beijing 100080, Peoples R China; Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA
关键词Ultrathin Gate Oxides Band-structure Electron-gas States Junctions Formula
学科领域Physics
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收录类别SCI
WOS记录号WOS:000239174100063
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被引频次:8[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.itp.ac.cn/handle/311006/5946
专题理论物理所1978-2010年知识产出
通讯作者Zhang, XG , Oak Ridge Natl Lab, Ctr Nanophys Mat Sci, Oak Ridge, TN 37831 USA
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Zhang, X. -G.,Lu, Zhong-Yi,Pantelides, Sokrates T.,et al. First-principles theory of tunneling currents in metal-oxide-semiconductor structures[J]. APPLIED PHYSICS LETTERS,2006,89(3):-.
APA Zhang, X. -G.,Lu, Zhong-Yi,Pantelides, Sokrates T.,&Zhang, XG , Oak Ridge Natl Lab, Ctr Nanophys Mat Sci, Oak Ridge, TN 37831 USA.(2006).First-principles theory of tunneling currents in metal-oxide-semiconductor structures.APPLIED PHYSICS LETTERS,89(3),-.
MLA Zhang, X. -G.,et al."First-principles theory of tunneling currents in metal-oxide-semiconductor structures".APPLIED PHYSICS LETTERS 89.3(2006):-.
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