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Quantized transport of interface and edge states in bent graphene 期刊论文
SOLID STATE COMMUNICATIONS, 2015, 卷号: 207, 期号: 0, 页码: 30-34
Authors:  Li, CC;  Xu, L;  Zhang, J;  Zhang, J (reprint author), Xinjiang Univ, Sch Phys Sci & Technol, Urumqi 830046, Peoples R China.
Adobe PDF(721Kb)  |  Favorite  |  View/Download：38/2  |  Submit date：2016/11/21
Bent Graphene  Interface State  Quantum Hall Effect  
Transport in three-dimensional topological insulators: Theory and experiment 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2012, 卷号: 44, 期号: 5, 页码: 860-884
Authors:  Culcer, D;  Culcer, D (reprint author), Univ Sci & Technol China, ICQD, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China.
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Hgte Quantum-wells  Single Dirac Cone  Surface-states  Phase-transition  Thin-films  Bi2te3  Bi2se3  Graphene  Limit  Nanoribbons  
Isotropic Landau levels of Dirac fermions in high dimensions 期刊论文
PHYSICAL REVIEW B, 2012, 卷号: 85, 期号: 8, 页码: 85132
Authors:  Li, Y;  Intriligator, K;  Yu, Y;  Wu, CJ;  Li, Y (reprint author), Univ Calif San Diego, Dept Phys, San Diego, CA 92093 USA.
Adobe PDF(181Kb)  |  Favorite  |  View/Download：89/11  |  Submit date：2014/04/25
Hgte Quantum-wells  Topological Insulators  Electronic-properties  Gauge Noninvariance  Hall Conductance  Magnetic-field  Graphene  Phase  Fractionization  Realization  
Plasmon mass and Drude weight in strongly spin-orbit-coupled two-dimensional electron gases 期刊论文
PHYSICAL REVIEW B, 2011, 卷号: 83, 期号: 11, 页码: 115135
Authors:  Agarwal, A;  Chesi, S;  Jungwirth, T;  Sinova, J;  Vignale, G;  Polini, M;  Agarwal, A (reprint author), CNR, Ist Nanosci, NEST, I-56126 Pisa, Italy.
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Hgte Quantum-wells  Single Dirac Cone  Topological Insulators  Spintronics  Excitations  Scattering  Systems  Surface  
Abelian and non-Abelian anyons in integer quantum anomalous Hall effect and topological phase transitions via superconducting proximity effect 期刊论文
PHYSICAL REVIEW B, 2011, 卷号: 83, 期号: 12, 页码: 125105
Authors:  Liu, XL;  Wang, ZQ;  Xie, XC;  Yu, Y;  Yu, Y (reprint author), Chinese Acad Sci, Inst Theoret Phys, POB 2735, Beijing 100190, Peoples R China.
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Insulators  Parity  Nu=1/2  States  Wells