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Manipulating interface states in monolayer-bilayer graphene planar junctions 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 2016, 卷号: 28, 期号: 18, 页码: 185001
Authors:  Zhao, F;  Xu, L;  Zhang, J;  Zhang, J (reprint author), Xinjiang Univ, Sch Phys Sci & Technol, Urumqi 830046, Peoples R China.;  Zhang, J (reprint author), Chinese Acad Sci, Inst Theoret Phys, State Key Lab Theoret Phys, Beijing 100190, Peoples R China.
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Monolayer-bilayer Graphene Planar Junction  Quantum Hall Effect  Quantum Spin Hall Effect  
Manipulating interface states in monolayer-bilayer graphene planar junctions 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 2016, 卷号: 28, 期号: 18, 页码: 185001
Authors:  Zhao, F;  Xu, L;  Zhang, J
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monolayer-bilayer graphene planar junction  BERRYS PHASE  quantum Hall effect  FIELD  quantum spin Hall effect