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The effect of stoichiometric disturbance on activation of MeV Si implantation in GaAs 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 卷号: 152, 期号: 40942, 页码: 307-313
Authors:  Zhang, YW;  Ding, EJ;  Zhang, TH;  Zhang, YW , Lund Inst Technol, Dept Phys Nucl, Box 118, S-22100 Lund, Sweden.
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Raman-spectroscopy  Ion-implantation  Inp  Damage