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题名: Anomalous dielectric behavior in nanocrystalline gamma-Fe2O3
作者: Ye, XS ;  Sha, J ;  Chen, B ;  Jiao, ZK ;  Zhang, LD
刊名: CHINESE SCIENCE BULLETIN
出版日期: 1999
卷号: 44, 期号:2, 页码:186-189
关键词: AMORPHOUS-SILICON NITRIDE
学科分类: Physics
通讯作者: Ye, XS , Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China.
部门归属: Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China; NW Inst Nucl Technol, Xian 710024, Peoples R China; Chinese Acad Sci, Inst Theoret Phys, Beijing 100080, Peoples R China; Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Peoples R China
英文摘要: The measurements of electric capacities and dielectric loss angles for nanocrystalline gamma-Fe2O3 under air and vacuum atmospheres have been conducted by using ac LRC method, and the conductivity and the polarization relaxation time have also been calculated from the frequency spectra of real and imaginary parts of the dielectric constants. The anomalous dielectric behavior implies the existence of two kinds of polarization mechanisms with different relaxation times, which are caused by the defects and the dangling bonds in the interlaces, respectively. The experimental and calculated results indicated that the polarization loss and thf! conductance loss are dominant in air atmosphere and vacuum, respectively.
收录类别: SCI
原文出处: 查看原文
WOS记录号: WOS:000079243000024
Citation statistics: 
内容类型: 期刊论文
URI标识: http://ir.itp.ac.cn/handle/311006/12203
Appears in Collections:理论物理所1978-2010年知识产出_期刊论文

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Recommended Citation:
Ye, XS,Sha, J,Chen, B,et al. Anomalous dielectric behavior in nanocrystalline gamma-Fe2O3[J]. CHINESE SCIENCE BULLETIN,1999,44(2):186-189.
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