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Ye, XS; Sha, J; Chen, B; Jiao, ZK; Zhang, LD; Ye, XS , Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China.
Anomalous dielectric behavior in nanocrystalline gamma-Fe2O3
发表期刊CHINESE SCIENCE BULLETIN
关键词Amorphous-silicon Nitride
摘要The measurements of electric capacities and dielectric loss angles for nanocrystalline gamma-Fe2O3 under air and vacuum atmospheres have been conducted by using ac LRC method, and the conductivity and the polarization relaxation time have also been calculated from the frequency spectra of real and imaginary parts of the dielectric constants. The anomalous dielectric behavior implies the existence of two kinds of polarization mechanisms with different relaxation times, which are caused by the defects and the dangling bonds in the interlaces, respectively. The experimental and calculated results indicated that the polarization loss and thf! conductance loss are dominant in air atmosphere and vacuum, respectively.
1999
ISSN1001-6538
卷号44期号:2页码:186-189
学科领域Physics
收录类别SCI
引用统计
被引频次:1[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.itp.ac.cn/handle/311006/12203
专题理论物理所科研产出_SCI论文
通讯作者Ye, XS , Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China.
推荐引用方式
GB/T 7714
Ye, XS,Sha, J,Chen, B,et al. Anomalous dielectric behavior in nanocrystalline gamma-Fe2O3[J]. CHINESE SCIENCE BULLETIN,1999,44(2):186-189.
APA Ye, XS,Sha, J,Chen, B,Jiao, ZK,Zhang, LD,&Ye, XS , Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China..(1999).Anomalous dielectric behavior in nanocrystalline gamma-Fe2O3.CHINESE SCIENCE BULLETIN,44(2),186-189.
MLA Ye, XS,et al."Anomalous dielectric behavior in nanocrystalline gamma-Fe2O3".CHINESE SCIENCE BULLETIN 44.2(1999):186-189.
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