ITP OpenIR  > 理论物理所科研产出  > SCI论文
Ye, XS; Sha, J; Chen, B; Jiao, ZK; Zhang, LD; Ye, XS , Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China.
Anomalous dielectric behavior in nanocrystalline gamma-Fe2O3
Source PublicationCHINESE SCIENCE BULLETIN
KeywordAmorphous-silicon Nitride
AbstractThe measurements of electric capacities and dielectric loss angles for nanocrystalline gamma-Fe2O3 under air and vacuum atmospheres have been conducted by using ac LRC method, and the conductivity and the polarization relaxation time have also been calculated from the frequency spectra of real and imaginary parts of the dielectric constants. The anomalous dielectric behavior implies the existence of two kinds of polarization mechanisms with different relaxation times, which are caused by the defects and the dangling bonds in the interlaces, respectively. The experimental and calculated results indicated that the polarization loss and thf! conductance loss are dominant in air atmosphere and vacuum, respectively.
1999
ISSN1001-6538
Volume44Issue:2Pages:186-189
Subject AreaPhysics
Indexed BySCI
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Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.itp.ac.cn/handle/311006/12203
Collection理论物理所科研产出_SCI论文
Corresponding AuthorYe, XS , Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China.
Recommended Citation
GB/T 7714
Ye, XS,Sha, J,Chen, B,et al. Anomalous dielectric behavior in nanocrystalline gamma-Fe2O3[J]. CHINESE SCIENCE BULLETIN,1999,44(2):186-189.
APA Ye, XS,Sha, J,Chen, B,Jiao, ZK,Zhang, LD,&Ye, XS , Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China..(1999).Anomalous dielectric behavior in nanocrystalline gamma-Fe2O3.CHINESE SCIENCE BULLETIN,44(2),186-189.
MLA Ye, XS,et al."Anomalous dielectric behavior in nanocrystalline gamma-Fe2O3".CHINESE SCIENCE BULLETIN 44.2(1999):186-189.
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